Process Selector Guide

Parameter/ Technology 1um  0.8 um  0.6 um 0.15 um 0.1 um 0.1 um 0.2 um
power  InP digital InP digital InP GaAs Power GaAs  InP  GaN 
HBT  HBT (2Met)   HBT (4Met)   PHEMT  PHEMT  PHEMT HEMT 
Ft (peak)  80 GHz  160 GHz  >250 GHz  80 GHz  120 GHz  180 GHz  60 GHz 
Fmax (peak)  150 GHz  >200 GHz  >300 GHz  200 GHz  250 GHz  350 GHz  200 GHz 
Beta/Gm  25 80 80 550 650 1200 350
mS / mm mS / mm mS / mm mS / mm
Vce / Vds (Max)  7.5V 5V 4V 5V 4V 1.2V 28V 
Current Density (Max)  0.7 1.5 2.5 250 250 150 250
mA / um²  mA / um²  mA / um²  mA / mm  mA / mm  mA/ mm  mA / mm 
Wafer Thickness  75 um  75 um  75 um  50 & 100 um  50 & 100 um  75 um  100 um 
Airbridged Metal Available  Yes  Yes  Yes  Yes  Yes  Yes  Yes 
Backside Vias  Yes  Yes  Yes  Yes  Yes  Yes  Yes 
Diode Type  Schottky  Schottky  Schottky  Gate Source  Gate Source  Gate Source  NA 
Wafer Size  100 mm  100 mm  100 mm  100 mm  100 mm  100 mm  100 mm 
Highlight/ Application • Mixed Signal designs • Fiber Optic applications up to 25 Gbps  • Fiber Optic applications up to 40 & 100 Gbps • High power amps < 5W up to 60 GHz • Low Noise Amplifier up to 100 GHz • Very Low noise Amplifiers • Very high power amplifiers < 10W up to 40 GHz
• ADC/DAC • High Speed digital circuitry • High Speed digital circuitry • Linear amplifiers • Power amplifiers < 1W up to 100 GHz  • mmW sensors
      • Driver amplifiers • Low power dissipation  
    • Up/Dwn cnverters • Up/Dwn cnverters  
Commercial Qualification Date TBD  NOW  NOW  NOW  NOW  NOW  Q3 2015