Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications.
- To request a quotation, product availability or other product information not provided below, please click here.
- For Application Support on GaN Power Amplifiers products please call 310-814-5000, or e-mail us.
GaN Power Amplifiers Products
Part |
Description |
Frequency (GHz) |
Gain (dB) |
P1dB (dBm) |
Psat (dBm) |
Form |
Availability |
|---|
|
APN294 |
GaN HEMT Power Amplifier |
9 to 13.2 |
13 |
39 |
42 |
Die |
Stock |
|
APN252 |
GaN HEMT Driver Amplifier |
10-14 |
25.5 |
34 |
38 |
Die |
Stock |
|
APN250 |
GaN HEMT Power Amplifier |
10-14 |
13 |
39 |
42 |
Die |
Stock |
APN226 |
GaN HEMT Power Amplifier |
13-16 |
20 |
36 |
39.5 |
Die |
Stock |
|
APN232 |
GaN HEMT Power Amplifier |
13.5-15.5 |
13 |
38.5 |
42 |
Die |
Stock |
|
APN237 |
GaN HEMT Dual Channel Power Amplifier |
13.5-15.5 |
12.5 |
40.5 |
44 |
Die |
Stock |
APN293 |
GaN HEMT Power Amplifier |
16-20.5 |
10 |
36.5 |
39.5 |
Die |
Stock |
|
APN279 |
GaN HEMT Power Amplifier |
16-20.8 |
17 |
39.5 |
42.5 |
Die |
Stock |
APN149 |
GaN HEMT Power Amplifier |
18-23 |
20 |
36 |
39 |
Die |
Stock |
APN243 |
GaN HEMT Power Amplifier |
23-28 |
20 |
38 |
40.5 |
Die |
Stock |
APN244 |
GaN HEMT Power Amplifier |
23-28 |
21 |
37 |
39 |
Die |
Stock |
APN228 |
GaN HEMT Power Amplifier |
27-32 |
19.5 |
39 |
41.2 |
Die |
Stock |
APN229 |
GaN HEMT Power Amplifier |
27-32 |
20 |
17 |
39 |
Die |
Stock |
|
APN248 |
GaN HEMT Power Amplifier |
27-31 |
17.5 |
42 |
44 |
Die |
Stock |
APN173 |
GaN HEMT Power Amplifier |
34-36 |
19.5 |
TBD |
37.5 |
Die |
Stock |
APN236 |
GaN HEMT Power Amplifier |
34.5-35.5 |
16 |
38 |
40 |
Die |
Stock |
|
APN167 |
GaN HEMT Power Amplifier |
43-46 |
20 |
35.5 |
38.5 |
Die |
Stock |
Before handling, assembling or testing our GaAs MMICs please review our "GaN Chip Handling, Assembly and Testing Techniques" application note