Gallium Arsenide (GaAs) HEMT Matches Technologies & Applications

Northrop Grumman offers a range of GaAs pHEMT processes for matching technologies with applications. GaAs pHEMT technology is suitable for cellular backhaul, linear digital radios, V-band, E-band and W-band radar applications, among others. Summary of GaAs pHEMT Process Technologies:

Technology

Wafer Thickness

Applications

Usable Frequency Range

0.15um GaAs pHEMT

4mil

Linear Power Amplifiers Up/Down Converters Multipliers Switches

< 65GHz

0.15um GaAs pHEMT

2mil

High Power Amplifiers Up/Down Converters Multipliers Switches

< 65GHz

0.1um GaAs pHEMT Power

4mil

Linear Low Noise Amplifiers Up/Down Converters Multipliers Switches

< 100GHz

0.1um GaAs pHEMT Power

2mil

Low Noise Amplifiers

< 100GHz

0.1um GaAs pHEMT Low Noise

4mil

Linear Low Noise Amplifiers Up/Down Converters Multipliers Switches

< 100GHz

 

These technologies are fabricated on 100mm substrates and offer two metal-interconnect layers, thin film resistors, MIM capacitors, capacitors-on-vias, air bridges and backside vias.