Indium Phosphide (InP) HEMT


Northrop Grumman's 0.1 um InP HEMT process is ideal for low-noise amplifiers in a host of applications. The high ft, high gain, low noise, and low DC power consumption provide superior performance in applications such as wireless telecommunications, phased arrays, passive millimeter wave imaging, and radar receivers up to 140 GHz.

Our InP HEMT technology is fabricated on 3mil thick 100mm substrates and offers two metal-interconnect layers, thin film resistors, MIM capacitors, air bridges, and backside vias