RF Transistors

 RF transistors

NGCGXXE0405CM 400 – 450 MHz VFET RF Transistor

The NGCGXXE0405CM SiC RF static induction transistor (SIT) is a normally-on vertical field effect transistor. Each chip contains 5 independent cells which may be wire bonded in parallel to form large power transistors. Up to 10 chips with 50 cells maximum have been successfully combined in one package to form an extremely high power transistor. Each individual cell is capable of 20-40 W pulsed output power depending upon bias and matching conditions.

WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor

The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low thermal resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts.

WPTB64A1011Ax Class C 1030/1090 MHz Bipolar RF Transistor

The WPTB64A1011Ax is an application specific transistor implemented using Northrop Grumman's Silicon Power Bipolar process and developed for short-pulse, high-power IFF applications. Ballasted emitters in 64 separate base cells on a 3.5 mil thick die help ensure low thermal resistance and good junction temperature uniformity for high reliability. This device is configured for common base operation and is tested at 800 ns pulse width with 1% duty cycle.

WPTB32A1214A 1215-1400 MHz Bipolar RF Transistor

The WPTB32A1214A is a high-power NPN transistor designed for pulsed radar applications. The 3217 L-Band die utilized in this device is capable of operating over a wide range of pulse widths, duty cycles and bandwidths. An application-specific design can easily be tailored to your requirements through minor changes in ballast resistor value and internal matching network values.

WPTB48F2729Cx 2.7-2.9 GHz Bipolar RF Transistor

The WPTB48F2729Cx is an application specific transistor implemented using Northrop Grumman's SiGe Power Bipolar process and developed for pulsed radar systems. Optimal internal matching delivers high performance for Air Traffic Control applications with collector efficiencies approaching the values normally observed for L-Band devices operating at less than half the frequency. This device is configured for common base operation and is tested at 60 µsec pulse width and 6% duty cycle.