HBT Technology with Exceptionally Low Phase-Noise

HBT technologies

HBT graph - ATL is better

Northrop Grumman offers foundry service for a full featured GaAs/InGaP HBT MMIC technology on 100µm substrates. The HBT features exceptionally low phase noise, approximately 10x better than competing devices from other foundries. This capability raises the bar on GaAs HBT MMIC performance for low noise, high TOI circuits. The technology also offers precision and bulk (epi) resistors, MIM capacitors, two local and two global interconnect metal layers and BCB scratch protection.

Foundry details

  • Models available in ADS and Microwave Office
  • Final DRC check and reticle design and mask layout by Northrop Grumman personnel
  • Guaranteed delivery of two 100mm wafers to spec per lot (additional wafers may be available at cost)
  • Multi-project wafers available

Contact us for more information and pricing.

HBT

Emitter width

2µm

fmax

70GHz

fT

35GHz

β

35GHz

BVcbo

34V

BVceo

15V

BVbeo

7.6V


 

HBT diagram 

Features

  • 2µm emitter HBT
  • fmax = 70GHz (HBT)
  • fT = 35GHz (HBT)
  • Quiescent HBT current density: ≤ 25kA/cm2
  • Operating voltage: ≤ 7V
  • Phase noise: < -165dBc/Hz at 10KHz
  • MTTF > 106 hours at 125°C

Process description

  • 337pF/mm2 MIMCAPs
  • Precision NiCrSi resistor: 10 Ω/sq
  • Epi resistor : 240 Ω/sq
  • 2 Layers of Interconnect metal with optional 3rd layer on 12µm BCB
  • BCB scratch protection
  • Through-wafer vias
  • 100mm wafer size

Contact us for more information and pricing.