Gallium Nitride (GaN) HEMT for High-Power, High-Frequency Electronics

Gallium Nitride's high breakdown voltage and saturation electron velocity make it ideal for high-power, high-frequency electronics. Northrop Grumman's 0.2 um GaN HEMT process provides >10x power density over Gallium Arsenide up to 60 GHz. This makes GaN the ideal choice for high-power power amplifiers and LNAs that also require high survivability. The technology is suitable for satellite communications and radar. Components utilizing this technology can be used for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications.

Northrop Grumman's GaN HEMT technology is fabricated on 4mil thick 4 inch substrates. GaN HEMT technology offers two metal-interconnect layers, thin film resistors, MIM capacitors, air bridges and backside vias.