Indium Phosphide (InP) HBT

Microelectronics Products and Services offers a range of Northrop Grumman sub-micron InP HBT processes suitable for applications in high-speed electronics such as Analog-to-Digital (A/D), Digital-to-Analog (D/A), fiber optic amplifiers and Voltage-Controlled Oscillators (VCOs). These processes include:

  • 0.8 um digital HBT (IH2)
  • 1.6 um power HBT (IH2-P)
  • 0.65 um digital HBT (IH4)

Northrop Grumman's InP HBT technology is fabricated on 3mil thick 100mm substrates and offers metal-interconnect layers, thin film resistors, MIM capacitors, air bridges and backside vias.