Performance Specs

microelectronics technologies  

Since its inception more than thirty years ago, the Northrop Grumman RF fabrication facility has been a source of leading-edge microwave and mm-wave devices and Monolithic Microwave Integrated Circuits (MMICs).

Capabilities are in place for RF device and MMIC fabrication, circuit design, full characterization, and assembly.

Today, Northrop Grumman provides a complete foundry service for Gallium Arsenide (GaAs) RF technologies.

Proven quality

  • 20 years of delivering advanced devices to spec, on time, at cost
  • DOD trusted foundry/ISO-9001 certified
  • Process/equipment control using SPC
  • Factory Works-based system to control/optimize work flow
  • Quality assured by a lab-wide CCB (Configuration Control Board)

Process features

  • All 100mm wafers
  • Direct-write ebeam for nanometer features
  • 12µm BCB: surface protection, metal3, baluns
  • Double recess for high breakdown PHEMTs
  • 50µm and 100µm thick wafers /thru-wafer vias
  • DC and RF in-process pcm testing for QC
  • Detailed wafer level and packaged RF char.

Typical performance characteristics

tabular data 

Contact us for more information and pricing