Microelectronics – Space Park

Microelectronics – Space Park

Northrop Grumman’s Space Park foundry is a leader in the design and manufacture of III-V compound semiconductors.

Microelectronics Products and Services

Our microelectronics products enable missions that range from advanced satellite communications and complex astrophysics systems to commercial applications, such as smartphones and ground-based communications infrastructure.

Young Black woman in lab attire examine an object in a lab

Foundry Services and Products

The Northrop Grumman Space Park foundry in Redondo Beach, California, processes hetero-junction bipolar transistor and high electron mobility transistor monolithic microwave and millimeter-wave integrated circuits. The foundry focuses on products that are microscopic, modular, high speed, and low in power consumption and temperature.

Our full suite of foundry services turns concepts into reality.

Microelectronics Products and Services Datasheet
building with Northrop Grumman logo on front

Foundry Services and Products

  • Design
  • On-wafer tests
  • Assembly
  • Power amplifiers
  • Low noise amplifiers
  • Mixers and multipliers
  • Switches
microchip on fingertip

Technologies

  • Gallium Nitride (GaN) HEMT
    • High power and high survivability
  • Gallium Arsenide (GaAs) HEMT
    • Linear power and low noise
  • Indium Phosphide (InP) HEMT
    • Low noise and high frequency
  • Indium Phosphide (InP) HBT
    • High speed digital and mixed signals
  • DAHI (Diverse Accessible Heterogeneous Integration)
  • Multi-layer Wafer Packaging
Semiconductors Devices

We Offer:

  • 100mm wafer-size fabrication facilities
  • In-house multi-wafer Molecular Beam Epitaxy (MBE)
  • Process design kits (PDK) with synchronized layout and model sets
  • Processes designed for high-reliability applications
  • Department of Defense trusted foundry
  • Multi-customer shared mask foundry products and services
  • On-wafer RF testing beyond 110 GHz
an image of a satellite in space with earth in the background

Microelectronics to Macroelectronics

  • Semiconductor material development​
  • Integrated circuit design and fabrication​
  • Multi-chip module assembly​
  • Multi-function hardware integration enabling satellites to conduct space missions

Products

Before handling, assembling or testing our GaAs MMICs please review our “GaAs IC Die Handling, Assembly and Testing Techniques” application note.

Power Amplifiers

Part Description Frequency (GHz) Gain (dB) P1dB (dBm) PSat (dBm) Availability
APH667 GaAs HEMT High Power Amplifier 81 – 86 17 TBD 25.5 Stock
APH668 GaAs HEMT High Power Amplifier 71 – 76 19 TBD 28 Stock
APH669 GaAs HEMT Medium Power Amplifier 81 – 86 16 20 23.5 Stock
APH670 GaAs HEMT Medium Power Amplifier 71 – 76 21 TBD 25 Stock
APH482 HEMT High Power Amplifier 92 – 96 7.5 22 25 Stock
APH631 HEMT Power Amplifier 92 – 96 23 15 18 Stock
APH635 HEMT Power Amplifier 92 – 95 17 20 22 Stock

GaN Power Amplifiers

Part Description Frequency (GHz) Gain (dB) P1dB (dBm) Psat (dBm) Form Availability
APN267 GaN HEMT Distributed Amplifier 2-18 10 35 38 Die Stock
APN270 GaN HEMT Power Amplifier 9-13.2 12 39 41 Die Stock
APN252 GaN HEMT Driver Amplifier 10-14 25.5 34 38 Die Stock
APN250 GaN HEMT Power Amplifier 10-14 13 39 42 Die Stock
APN226 GaN HEMT Power Amplifier 13-16 20 36 39.5 Die Stock
APN232 GaN HEMT Power Amplifier 13.5-15.5 13 38.5 42 Die Stock
APN237 GaN HEMT Dual Channel Power Amplifier 13.5-15.5 12.5 40.5 44 Die Stock
APN293 GaN HEMT Power Amplifier 16-20.5 10 36.5 39.5 Die Stock
APN279 GaN HEMT Power Amplifier 16-20.8 17 39.5 42.5 Die Stock
APN149 GaN HEMT Power Amplifier 18-23 20 36 39 Die Stock
APN243 GaN HEMT Power Amplifier 23-28 20 38 40.5 Die Stock
APN244 GaN HEMT Power Amplifier 23-28 21 37 39 Die Stock
APN228 GaN HEMT Power Amplifier 27-32 19.5 39 41.2 Die Stock
APN229 GaN HEMT Power Amplifier 27-32 20 17 39 Die Stock
APN248 GaN HEMT Power Amplifier 27-31 17.5 42 44 Die Stock
APN292 GaN HEMT Power Amplifier 27-31 20 42 42 Die Stock
APN311 GaN HEMT Power Amplifier 27-31 20 43 45 Die Stock
APN173 GaN HEMT Power Amplifier 34-36 19.5 TBD 37.5 Die Stock
APN236 GaN HEMT Power Amplifier 34.5-35.5 16 38 40 Die Stock
APN167 GaN HEMT Power Amplifier 43-46 20 35.5 38.5 Die Stock
APN318 GaN HEMT Power/Driver Amplifier 47.2-51.4 15 40 Die Pre-Production
APN319 GaN HEMT Power/Driver Amplifier 47.2-51.4 16 37 Die Pre-Production

Low Noise Amplifiers

Part Description Frequency (GHz) Gain (dB) NF (dB) P1dB (dBm) Availability
ALP302_0 InP HEMT Low Noise Amplifier 17.2 – 21.2 33 0.8   Stock
ALP302_A InP HEMT Low Noise Amplifier 17.2 – 21.2 32.5 0.8   Stock
ALP275 InP HEMT Low Noise Amplifier 71 – 96 > 26 3 4 Stock
ALP283 InP HEMT Low Noise Amplifier 80 – 100 29 2.5 3 Stock
ALH394 HEMT Low Noise Amplifier 92 – 96 17 5 5 Stock
ALH495 (-LN) HEMT Low Noise Amplifier 80 – 100 18 4.3 3 Stock
ALH495 (-GB) HEMT Gain Block Amplifier 80 – 100 18 4.8 3 Stock
ALH497 (-LN) HEMT Low Noise Amplifier 80 – 100 17 4.2 0 Stock
ALH497 (-GB) HEMT Gain Block Amplifier 80 – 100 17 4.9 0 Stock
ALH503 (-LN) HEMT Low Noise Amplifier 80 – 100 16 4.2 0 Stock
ALH503 (-GB) HEMT Gain Block Amplifier 80 – 100 16 4.9 0 Stock
ALH504 (-LN) HEMT Low Noise Amplifier 82 – 102 18 4.1 3 Stock
ALH504 (-GB) HEMT Gain Block Amplifier 82 – 102 18 4.8 3 Stock
ALP280 InP HEMT Low Noise Amplifier 80 – 100 29 2 3 Stock
ALP275 InP HEMT Low Noise Amplifier 71 – 96 > 26 3 4 Stock
ALP283 InP HEMT Low Noise Amplifier 80 – 100 29 2.5 3 Stock
ALP291 InP HEMT Low Noise Amplifier 71 – 86 29 2.7 3 Stock

Mixers

Part Description RF Freq (GHz) LO Freq( GHz) IF Freq (GHz) CL(dB) Availability
MBH100 HEMT Schottky Diode Mixer 91 – 99 91 – 99 DC-3 12 Stock

Multipliers & Switches

Part Description Freq Out (GHz) Freq In (GHz) RF Input (dBm) CG/CL/IL(dB) Availability
SDH148 HEMT SPDT Switch 80 – 100 NA NA < 3/IL Stock
XDH150 HEMT X2 Multiplier 92 – 96 46 – 48 -5 3/CG Stock

Modules

Part Description Frequency (GHz) Gain (dB) NF (dB) P1dB (dBm) Psat (dBm) Form Availability
MLA1101 140 GHz Low Noise Amplifier 130-140 20 6 TBD TBD Waveguide Module Stock
MGA2101 225-325 GHz Gain Block Module 225-325 16 8 TBD 0 Waveguide Module Stock

Complete Fabrication Cycle

Process Selector Guide

Parameter/ Technology 1um 0.8 um 0.6 um 0.15 um 0.1 um 0.1 um 0.2 um
power InP digital InP digital InP GaAs Power GaAs InP GaN
HBT HBT (2Met) HBT (4Met) PHEMT PHEMT PHEMT HEMT
Ft (peak) 80 GHz 160 GHz >250 GHz 80 GHz 120 GHz 180 GHz 60 GHz
Fmax (peak) 150 GHz >200 GHz >300 GHz 200 GHz 250 GHz 350 GHz 200 GHz
Beta/Gm 25 80 80 550 650 1200 350
mS / mm mS / mm mS / mm mS / mm
Vce / Vds (Max) 7.5V 5V 4V 5V 4V 1.2V 28V
Current Density (Max) 0.7 1.5 2.5 250 250 150 250
mA / um² mA / um² mA / um² mA / mm mA / mm mA/ mm mA / mm
Wafer Thickness 75 um 75 um 75 um 50 & 100 um 50 & 100 um 75 um 100 um
Airbridged Metal Available Yes Yes Yes Yes Yes Yes Yes
Backside Vias Yes Yes Yes Yes Yes Yes Yes
Diode Type Schottky Schottky Schottky Gate Source Gate Source Gate Source NA
Wafer Size 100 mm 100 mm 100 mm 100 mm 100 mm 100 mm 100 mm
Highlight/ Application • Mixed Signal designs • Fiber Optic applications up to 25 Gbps • Fiber Optic applications up to 40 & 100 Gbps • High power amps < 5W up to 60 GHz • Low Noise Amplifier up to 100 GHz • Very Low noise Amplifiers • Very high power amplifiers < 10W up to 40 GHz
• ADC/DAC • High Speed digital circuitry • High Speed digital circuitry • Linear amplifiers • Power amplifiers < 1W up to 100 GHz • mmW sensors
      • Driver amplifiers • Low power dissipation  
    • Up/Dwn cnverters • Up/Dwn cnverters  
Commercial Qualification Date TBD NOW NOW NOW NOW NOW Q3 2015

Design Resources

We offer a variety of tools including design kits and manuals to help our customers build the product they need.

Technology ADS* AWR Spice Cadence GDSII Design Manual
4mil GaAs 0.1um Low Noise 11-2006 7-2011 NA V1.7 2008
2mil GaAs 0.1um Power 1-2007 7-2011 NA ? 2008
4mil GaAs 0.1um Power 8-2010 7-2011 NA V1.7 2008
4mil GaAs 0.15um 6-2011 7-2011 NA V1.7 2006
2mil GaAs 0.15um 9-2008 7-2011 NA ? 2006
InP HBT: IH2 – Digital 11-2009 NA 11-2009 V1.2 TBD
InP HBT: IH2-Power TBD NA TBD V1.2 TBD
InP HBT: IH4 9-2009 NA 11-2009 V1.5 TBD
InP HEMT 7-2011 TBD NA ? TBD
GaN 0.25um 3-2011 TBD NA V1.7 2009 (Draft)

green wafer

Starry Nite Multi-project Wafer (MPW) Runs

Northrop Grumman was awarded the State-of-the-Art Radio Frequency Gallium Nitride (Starry Nite) program in Dec. 2021.  As a part of the Starry Nite program, Northrop Grumman will mature a 90 nm Gallium Nitride node capable of W-band operation to manufacturing readiness level (MRL) 8.  Throughout the program, foundry access to the 90 nm GaN node will be provided to external and internal designers through multi-project wafer (MPW) runs. 

The 90 nm GaN technology is not a frozen process.  Three model updates are planned during the program.  Preliminary technology performance parameters are provided in the table.

Items of note:

  • The Starry Nite program only pays for mask and fabrication
  • Testing and subdicing available at additional cost
  • ADS PDK supplied after NDA. Contact us for details on models for other design tools.
  • Government purpose rights to the design may be required to participate
  • All designs will be archived into a government repository

Preliminary Technology Performance Parameters

Technology fT (GHz) fmax (GHz) Gm (mS/mm) VDS,max (V) Imax (A/mm) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm)
90 nm GaN HEMT 100 >250 600 15 – 18 1.2 50 um Yes Yes 100

2022 Starry Nite MPW Runs Calendar

  Q1 Q2 Q3 Q4
  J F M A M J J A S O N D
MPW1       11         23      
MPW2               1 1   10  
MPW3                     18 16

The steps for the MPW runs are:

  • Application deadline – Complete application form and submit by application deadline
  • Performer space awarded – Government will use completed applications to decide on which designs to run on the mask and notify designers
  • Design submission – Approved designs must be submitted by the submission date on the calendar
  • Die delivered – At completion of fabrication, die will be delivered to designers


Email us if interested in participating in a Starry Nite MPW Run: as-mps.sales@ngc.com

Banned Substances Assessment

The following table lists the materials and substances that are present/not present in our products and processes.

This information is provided to assure our customers of the environmental impact of selecting products manufactured by Northrop Grumman.

Banned Substances MMIC GaAs Fabrication Process MMIC InP Fabrication Process
Asbestos 0 ppm 0 ppm 0 ppm 0 ppm
Azo Dye 0 ppm 0 ppm 0 ppm 0 ppm
Cadmium and Cadmium Compounds 0 ppm 0 ppm 0 ppm 0 ppm
Chlorofluorcarbons (CFCs)/ Hydrochlorofluorocarbons (HCFC) 0 ppm 0 ppm 0 ppm 0 ppm
Ethylene Glycol Monomethyl Ether and its acetate 0 ppm 0 ppm 0 ppm 0 ppm
Ethylene Glycol Monoethyl Ether and its acetate 0 ppm 0 ppm 0 ppm 0 ppm
Halogenated dioxins and furans 0 ppm 0 ppm 0 ppm 0 ppm
Hexavalent Chromium and Hexavalent Chromium Compounds 0 ppm 0 ppm 0 ppm 144,000 ppm
Lead and Lead Compounds 0 ppm 0 ppm 0 ppm 0 ppm
Soldering with Lead 0 ppm 0 ppm 0 ppm 0 ppm
Mercury and Mercury Compounds 0 ppm 0 ppm 0 ppm 0 ppm
Short Chain Chlorinated Paraffins (C10-13, CI>50%) 0 ppm 0 ppm 0 ppm 0 ppm
Perfluorooctanesiltonic Acids (PFOSs)/ Perfluorooctanoic Acids (PFOAs) 0 ppm 0 ppm 0 ppm 0 ppm
Polybrominated Biphenyls (PBBs)/ Polybrominated Biphenyls Ethers (PBDEs) 0 ppm 0 ppm 0 ppm 0 ppm
Polychlorinated Biphenyls(PCBs) 0 ppm 0 ppm 0 ppm 0 ppm
Polychloroterphenyls and directives (PCTs) 0 ppm 0 ppm 0 ppm 0 ppm
Radioactive Materials 0 ppm 0 ppm 0 ppm 0 ppm
Tributyl tin (TBT) and Triphenyl tin (TPT) compounds 0 ppm 0 ppm 0 ppm 0 ppm

*Northrop Grumman MPS reserves the right to update this list from time to time as products and services are changed or upgraded.
Last Updated 5/5/2008

MPS Building

About Us

Microelectronics Products and Services (MPS) provides commercial access to Northrop Grumman’s state-of-the-art Advanced Semiconductor Foundry. The foundry has a history of facilitating technological advancements that have allowed Northrop Grumman to redefine the commercial telecommunications industry.

  • Our advanced GaN processing created the highest output power at Ka-band frequencies.
  • We provided the first GaAs chipsets for the V-band, E-band, and W-band frequency ranges.
  • Our GaAs HEMT chipset (under the Velocium Products label) enabled the 23/26 and 38 GHz point-to-point wireless telecom market.
  • Our GaAs HBT process sparked the cell phone power amplifier revolution of the late 1990s.

MPS continues to lead the way forward by leveraging its expertise in GaAs, InP, and GaN technologies to provide discriminating MMICs in wireless E-band telecom, W-band radar, and satcom high power amplifiers.

The MPS Difference

MPS is committed to quality and reliability across its vertically integrated semiconductor value chain, from raw materials and design to fabrication and testing.

These technologies have been developed with the goal of delivering a proven reliable product useable in defense critical applications. As such commercial companies can benefit from this commitment to quality and reliability. This commitment begins with the raw material (as Northrop performs its own epitaxial growth) thru design, fabrication and even in testing. Northrop Grumman’s vertically integrated development process allows for a holistic view of reliability and quality.

Contact Us

Microelectronic Products and Services
Northrop Grumman Space Systems
One Space Park, D1/1024
Redondo Beach, CA 90278
USA

Telephone: +1-310-814-5000
Fax: +1-310-812-7011

Sales Inquiries: as-mps.sales@ngc.com

Contact Product Support: as-mps.sales@ngc.com

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