Microelectronics Products and Services

Northrop Grumman’s microelectronics products enable missions that range from advanced satellite communications and complex astrophysics systems to commercial applications, such as smartphones and ground-based communications infrastructure. Northrop Grumman has several U.S. based facilities with state-of-the-art design capabilities, multiple Si and III-V processing nodes, electrical testing, reliability screening, and failure analysis.

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Products

Power Amplifiers

Power Amplifiers

Part Description Frequency (GHz) Gain (dB) P1dB (dBm) PSat (dBm) Availability
APH668 GaAs HEMT High Power Amplifier 71 - 76 19 TBD 28 Stock
APH670 GaAs HEMT Medium Power Amplifier 71 - 76 21 TBD 25 Stock
APH667
GaAs HEMT High Power Amplifier 81 - 86 17 TBD 25.5 Stock
APH669 GaAs HEMT Medium Power Amplifier 81 - 86 16 20 23.5 Stock
APH482 HEMT High Power Amplifier 92 - 96 7.5 22 25 Stock
APH631 HEMT Power Amplifier 92 - 96 23 15 18 Stock
APH635 HEMT Power Amplifier 92 - 95 17 20 22 Stock

GaN Power Amplifiers

Part Description Frequency (GHz) Gain (dB) P1dB (dBm) Psat (dBm) Form Availability
APN267 GaN HEMT Distributed Amplifier 2-18 10 35 38 Die Stock
APN270 GaN HEMT Power Amplifier 9-13.2 12 39 41 Die Stock
APN252 GaN HEMT Driver Amplifier 10-14 25.5 34 38 Die Stock
APN250 GaN HEMT Power Amplifier 10-14 13 39 42 Die Stock
APN226 GaN HEMT Power Amplifier 13-16 20 36 39.5 Die Stock
APN232 GaN HEMT Power Amplifier 13.5-15.5 13 38.5 42 Die Stock
APN237 GaN HEMT Dual Channel Power Amplifier 13.5-15.5 12.5 40.5 44 Die Stock
APN279 GaN HEMT Power Amplifier 16-20.8 17 39.5 42.5 Die Stock
APN187 GaN HEMT Power Amplifier 17-22 17 40 42 Die/Tab Stock
APN149 GaN HEMT Power Amplifier 18-23 20 38 39 Die/Tab Stock
APN243 GaN HEMT Power Amplifier 23-28 20 38 40.5 Die Stock
APN244 GaN HEMT Power Amplifier 23-28 21 37 39 Die Stock
APN228 GaN HEMT Power Amplifier 27-31 16 39 41.2 Die/Tab Stock
APN229 GaN HEMT Power Amplifier 27-32 20 17 39 Die/Tab Stock
APN292 GaN HEMT Power Amplifier 27-30 20 42 45.5 Die Stock
APN311 GaN HEMT Power Amplifier 27-31 20 43 45 Die Stock
APN173 GaN HEMT Power Amplifier 34-36 19.5 TBD 37.5 Die Stock
APN236 GaN HEMT Power Amplifier 34.5-35.5 16 38 40 Die Stock
APN167 GaN HEMT Power Amplifier 43-46 20 35.5 38.5 Die Stock
APN318 GaN HEMT Power/Driver Amplifier 47.2-51.4 15 - 40 Die Pre-Production
APN319 GaN HEMT Power/Driver Amplifier 47.2-51.4 16 - 37 Die Pre-Production
APN352 GaN HEMT Power/Driver Amplifier 47-51 15.5 40 40.5 Die Stock
APN353 GaN HEMT Power/Driver Amplifier 47-51 14 37.5 39 Die Stock
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Low Noise Amplifiers

Low Noise Amplifiers

Part Description Frequency (GHz) Gain (dB) NF (dB) P1dB (dBm) Availability
ALP302_0 InP HEMT Low Noise Amplifier 17.2 - 21.2 33 0.8   Stock
ALP302_A InP HEMT Low Noise Amplifier 17.2 - 21.2 32.5 0.8   Stock
ALP291 InP HEMT Low Noise Amplifier 71 - 86 29 2.7 3 Stock
ALP275 InP HEMT Low Noise Amplifier 71 - 96 > 26 3 4 Stock
ALP280 InP HEMT Low Noise Amplifier 80 - 100 29 2 3 Stock
ALP283 InP HEMT Low Noise Amplifier 80 - 100 29 2.5 3 Stock
ALH495 (-LN) HEMT Low Noise Amplifier 80 - 100 18 4.3 3 Stock
ALH495 (-GB) HEMT Gain Block Amplifier 80 - 100 18 4.8 3 Stock
ALH497 (-LN) HEMT Low Noise Amplifier 80 - 100 17 4.2 0 Stock
ALH497 (-GB) HEMT Gain Block Amplifier 80 - 100 17 4.9 0 Stock
ALH503 (-LN) HEMT Low Noise Amplifier 80 - 100 16 4.2 0 Stock
ALH503 (-GB) HEMT Gain Block Amplifier 80 - 100 16 4.9 0 Stock
ALH504 (-LN) HEMT Low Noise Amplifier 82 - 102 18 4.1 3 Stock
ALH504 (-GB) HEMT Gain Block Amplifier 82 - 102 18 4.8 3 Stock
ALP292 InP HEMT Low Noise Amplifier 90 - 112 30 3 3 Stock
ALH394 HEMT Low Noise Amplifier 92 - 96 17 5 5 Stock
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Frequency Conversion

Mixers

Part Description RF Freq (GHz) LO Freq (GHz) IF Freq (GHz) CL (dB) Availability
MDJ183 InP Schottky Diode Mixer 17 - 32 17 - 32 DC-10 8 Pre-Production
MDJ169 InP Schottky Diode Mixer 24 - 44 24 - 44 DC-15 7.5 Pre-Production
MDJ178 InP Schottky Diode Mixer 37 - 61 37 - 61 DC-15 8.5 Pre-Production
MDJ187 InP Schottky Diode Mixer 40 - 76 40 - 76 DC-25 9 Pre-Production
MBH100 HEMT Schottky Diode Mixer 91 - 99 91 - 99 DC-3 12 Stock
MDJ191 InP Schottky Diode Mixer 92 - 97 92 - 97 DC-20 8.5 Pre-Production
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Switches

Part Description Freq Out (GHz) Freq In (GHz) RF Input (dBm) CG/CL/IL(dB) Availability
SF0083 SLCFET SPDT Switch 0.5 – 25 NA NA 0.38 / IL Stock
SDH148 HEMT SPDT Switch 80 - 100 NA NA 3 / IL Stock
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Modules

Part Description Frequency (GHz) Gain (dB) NF (dB) P1dB (dBm) Psat (dBm) Form Availability
MLA1101 140 GHz Low Noise Amplifier 130-140 20 6 TBD TBD Waveguide Module Stock
MGA2101 225-325 GHz Gain Block Module 225-325 16 8 TBD 0 Waveguide Module Stock
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RAD Hard Mixed Signal

Datasheet Description
Download Radiation Hardened and High Temperature EEPROMS
Download Multiplexer
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Discrete Devices

Datasheet Description
Download Bipolar RF Transistors
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Foundry Service

GaN HEMT

Technology fT (GHz) fmax (GHz) Gm (mS/mm) VDS,max (V) Imax (A/mm) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm) Qualification
200 nm GaN HEMT 60 150 325 24*/28** 1.26 100 Yes Yes 100 Space Qualified
150 nm GaN HEMT 75 175 410 24 1.09 75 Yes Yes 100 Commercial Qualified
90 nm GaN PWR HEMT 100 200 650 20 1.55 50 Yes Yes 100 Commercial Qualification Expected Q4 2025
90 nm GaN HSLN HEMT 100 200 730 10 1.5 50 Yes Yes 100 Commercial Qualification Expected Q1 2027

*Space, **Commercial
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InP HEMT

Technology fT (GHz) fmax (GHz) Gm (mS/mm) VDS,max (V) Imax (A/mm) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm) Qualification
100 nm InP HEMT 200 400 1200 1.2 0.9 75 Yes Yes 100 Space Qualified
70 nm InP IACC 250 TBD 2400 1.3 1.0 75 Yes Yes 100 Engineering
35 nm InP IACC 400 1100 2500 1.2 1.0 50 Yes Yes 75 Engineering 
25 nm InP IACC 610 1500 3000 1.2 1.2 25 Yes Yes 75 Engineering 
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GaAs HEMT

Technology fT (GHz) fmax (GHz) Gm (mS/mm) VDS,max (V) Imax (A/mm) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm) Qualification
150 nm GaAs HEMT 90 200 565 5 0.68 50/100 Yes Yes 100 Space Qualified
100 nm GaAs HEMT-Low Noise 120 250 675 4 0.67 100 Yes Yes 100 Space Qualified
100 nm GaAs HEMT-Power 125 250 690 4 0.67 50/100 Yes Yes 100 Space Qualified
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InP HBT

Technology fT (GHz) fmax (GHz) Beta VCE,max (V) Jc,max (mA/um²) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm) Qualification
0.65 um InP TF4 Digital (R445) 150 400 70 6 1.5 75 No Yes 100 Engineering
0.65 um InP TF4 Mixed-Signal (R442) 250 300 70 3.5 2.5 75 No Yes 100 Space Qualified
0.8 um InP TF2P Power (R447) 75 150 70 7.5 0.75 75 Yes Yes 100 Engineering
0.8 um InP TF2 Digital (R443) 150 200 70 5 1.5 75 Yes Yes 100 Space Qualified
0.25 um InP TF5  (R371P5) 350 700 30 3 5 75 No Yes 100 Engineering
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SLCFET

Technology Fco (THz) Operation Frequency (GHz) Ron (Ohm-mm) Coff (pF/mm) Ion (A/mm) Control Voltage (V) CW Input Power (dBm) Vpo (V) Breakdown Voltage (V) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm) Qualification
SLCFET 3S 1.8 DC to 100 0.35 0.25 1.4 0, -14 ≤ 35 -5 40 100 Yes Yes 100 Engineering
SLCFET 3HP 1.8 DC to 100 0.35 0.25 1.4 0, -20 > 35 -6 60 100 Yes Yes 100 Engineering
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Wafer Post Processing

Wafer Bumping and Dicing

  • Bumping Process includes passivation, under bump metal, electroplating, solder sphere drop process. 
  • Whole Wafer probing 150mm to 300mm wafer sizes
  • Dicing process includes: A dice before grind mechanical saw, thinning, laser die marking, die sort into waffle packs and tape & reel
  • Metrology processing including whole wafer bump shear, 100% 2D/3D bump measurements as well as process controls in place for passivation and UBM layers
  • Wafer sizes capability: 100mm, 150mm, 200mm and 300mm 
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Wafer Probe

Datasheet Description
Download Northrop Grumman’s Microelectronics Test Services
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Advanced Assembly Capabilities

  • Multi-die, multi-foundry flip-chip 2D/3D assembly
  • High accuracy thermocompression bonding
  • Automated optical and x-ray inspections
  • Organic, glass, silicon, and silicon carbide substrate handling
  • Automated reflow, underfill, cleaning, ball attach
  • High accuracy depaneling (mechanical, laser, saw)
  • Spaceflight qualified packaging
  • Hermetic wafer-level packaging
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Advanced Test Capabilities

Test Capabilities Span Digital, Mixed Signal, Analog, and Cross-Domain

  • Automated testing at multiple levels: whole wafer, singulated die on film frame, and package-level
  • Multi-channel testing up to W-band
  • Automated optical inspection (all formats)
  • Classified testing options
  • Post-test analysis & screening

Test Development Services

  • Hardware & software design
  • Test card, board, socket, etc. design

Reliability & Environmental Testing

  • Burn-in / HAST / HTHB & other reliability tests
  • RF shielded testing

Product Engineering & Management

  • IP protection controls
  • Yield management
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close-up of microelectronics wafers

Starry Nite Multi-project Wafer (MPW) Runs

Northrop Grumman was awarded the State-of-the-Art Radio Frequency Gallium Nitride (Starry Nite) program in Dec. 2021.  As a part of the Starry Nite program, Northrop Grumman will mature a 90 nm Gallium Nitride node capable of W-band operation to manufacturing readiness level (MRL) 8.  Throughout the program, foundry access to the 90 nm GaN node will be provided to external and internal designers through multi-project wafer (MPW) runs. 

The 90 nm GaN technology is not a frozen process.  Three model updates are planned during the program.  Preliminary technology performance parameters are provided in the table.

Items of note:

  • The Starry Nite program only pays for mask and fabrication
  • Testing and subdicing available at additional cost
  • ADS PDK supplied after NDA. Contact us for details on models for other design tools.
  • Government purpose rights to the design may be required to participate
  • All designs will be archived into a government repository

Starry Nite MPW Runs Calendar

STARRY NITE MPWs

2025
Q1 Q2 Q3 Q4
Foundry Process Offering Name Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

NG

GaN09 90nm MPW1                        
MPW2                        
MPW3                        
MPW4                        
MPW5                        
MPW7             11          
MPW9               18        
GaN09 +AIC MPW6                   31    
MPW8       2                
GaN09-LN MPW1-LN   24                    
MPW2-LN             11          
MPW1-M 6 3       9            
MPW2-M           27 25     3    
GaN09-LN +AIC MPW3-M               22 19     12
MPW4-M                   31 21  

STARRY NITE MPWs

2026
2027
Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
Foundry Process Offering Name Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

NG

GaN09 90nm MPW1                                                
MPW2                                                
MPW3                                                
MPW4                                                
MPW5                                                
MPW7                                                
MPW9                                                
GaN09 +AIC MPW6                                                
MPW8   25                                            
GaN09-LN MPW1-LN                                                
MPW2-LN                                                
MPW1-M   23                                            
MPW2-M           26                                    
GaN09-LN +AIC MPW3-M                     9                          
MPW4-M   20                       15                    

The steps for the MPW runs are:

  • Application deadline – Complete application form and submit by application deadline
  • Performer space awarded – Government will use completed applications to decide on which designs to run on the mask and notify designers
  • Design submission – Approved designs must be submitted by the submission date on the calendar
  • Die delivered – At completion of fabrication, die will be delivered to designers


Email us if interested in participating in a Starry Nite MPW Run: as-mps.sales@ngc.com

Preliminary Technology Performance Parameters

Technology fT (GHz) fmax (GHz) Gm (mS/mm) VDS,max (V) Imax (A/mm) Wafer Thickness (µm) Airbridged Metal Available Backside Vias Wafer Size (mm)
90 nm GaN PWR HEMT 100 200 650 20 1.55 50 Yes Yes 100
90 nm GaN HSLN HEMT 100 200 730 10 1.5 50 Yes Yes 100
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Application Notes and Technical Papers

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Microelectronic Products and Services
Northrop Grumman Space Systems
One Space Park, D1/1024
Redondo Beach, CA 90278
USA

Sales Inquiries and Product Support: as-mps.sales@ngc.com