Microelectronics - Process Selector Guide

Process Selector Guide

Parameter/ Technology 1um 0.8 um 0.6 um 0.15 um 0.1 um 0.1 um 0.2 um
power InP digital InP digital InP GaAs Power GaAs InP GaN
HBT HBT (2Met) HBT (4Met) PHEMT PHEMT PHEMT HEMT
Ft (peak) 80 GHz 160 GHz >250 GHz 80 GHz 120 GHz 180 GHz 60 GHz
Fmax (peak) 150 GHz >200 GHz >300 GHz 200 GHz 250 GHz 350 GHz 200 GHz
Beta/Gm 25 80 80 550 650 1200 350
mS / mm mS / mm mS / mm mS / mm
Vce / Vds (Max) 7.5V 5V 4V 5V 4V 1.2V 28V
Current Density (Max) 0.7 1.5 2.5 250 250 150 250
mA / um² mA / um² mA / um² mA / mm mA / mm mA/ mm mA / mm
Wafer Thickness 75 um 75 um 75 um 50 & 100 um 50 & 100 um 75 um 100 um
Airbridged Metal Available Yes Yes Yes Yes Yes Yes Yes
Backside Vias Yes Yes Yes Yes Yes Yes Yes
Diode Type Schottky Schottky Schottky Gate Source Gate Source Gate Source NA
Wafer Size 100 mm 100 mm 100 mm 100 mm 100 mm 100 mm 100 mm
Highlight/ Application • Mixed Signal designs • Fiber Optic applications up to 25 Gbps • Fiber Optic applications up to 40 & 100 Gbps • High power amps < 5W up to 60 GHz • Low Noise Amplifier up to 100 GHz • Very Low noise Amplifiers • Very high power amplifiers < 10W up to 40 GHz
• ADC/DAC • High Speed digital circuitry • High Speed digital circuitry • Linear amplifiers • Power amplifiers < 1W up to 100 GHz • mmW sensors
• Driver amplifiers • Low power dissipation
• Up/Dwn cnverters • Up/Dwn cnverters
Commercial Qualification Date TBD NOW NOW NOW NOW NOW Q3 2015