Power Amplifiers
We offer a line of high-performance off-the-shelf MMIC modules at W-band, Q-band, and now THz speeds.
We offer a line of high-performance off-the-shelf MMIC modules at W-band, Q-band, and now THz speeds.
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | PSat (dBm) | Availability |
---|---|---|---|---|---|---|
APH667 |
GaAs HEMT High Power Amplifier | 81 - 86 | 17 | TBD | 25.5 | Stock |
APH668 |
GaAs HEMT High Power Amplifier | 71 - 76 | 19 | TBD | 28 | Stock |
APH669 |
GaAs HEMT Medium Power Amplifier | 81 - 86 | 16 | 20 | 23.5 | Stock |
APH670 |
GaAs HEMT Medium Power Amplifier | 71 - 76 | 21 | TBD | 25 | Stock |
Before handling, assembling or testing our GaAs MMICs please review our "GaAs IC Die Handling, Assembly and Testing Techniques" application note
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat(dBm) | Availability |
---|---|---|---|---|---|---|
APH482 |
HEMT High Power Amplifier | 92 - 96 | 7.5 | 22 | 25 | Stock |
APH484 |
HEMT High Power Amplifier | 93 - 95 | 10 | 21 | 23 | Stock |
APH631 |
HEMT Power Amplifier | 92 - 96 | 23 | 15 | 18 | Stock |
APH635 |
HEMT Power Amplifier | 92 - 95 | 17 | 20 | 22 | Stock |
Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications.
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
---|---|---|---|---|---|---|---|
APN267 | GaN HEMT Distributed Amplifier | 2-18 | 10 | 35 | 38 | Die | Stock |
APN270 | GaN HEMT Power Amplifier | 9-13.2 | 12 | 39 | 41 | Die | Stock |
APN252 | GaN HEMT Driver Amplifier | 10-14 | 25.5 | 34 | 38 | Die | Stock |
APN250 | GaN HEMT Power Amplifier | 10-14 | 13 | 39 | 42 | Die | Stock |
APN226 |
GaN HEMT Power Amplifier | 13-16 | 20 | 36 | 39.5 | Die | Stock |
APN232 | GaN HEMT Power Amplifier | 13.5-15.5 | 13 | 38.5 | 42 | Die | Stock |
APN237 | GaN HEMT Dual Channel Power Amplifier | 13.5-15.5 | 12.5 | 40.5 | 44 | Die | Stock |
APN293 |
GaN HEMT Power Amplifier | 16-20.5 | 10 | 36.5 | 39.5 | Die | Stock |
APN279 | GaN HEMT Power Amplifier | 16-20.8 | 17 | 39.5 | 42.5 | Die | Stock |
APN149 |
GaN HEMT Power Amplifier | 18-23 | 20 | 36 | 39 | Die | Stock |
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
---|---|---|---|---|---|---|---|
APN243 |
GaN HEMT Power Amplifier | 23-28 | 20 | 38 | 40.5 | Die | Stock |
APN244 |
GaN HEMT Power Amplifier | 23-28 | 21 | 37 | 39 | Die | Stock |
APN228 |
GaN HEMT Power Amplifier | 27-32 | 19.5 | 39 | 41.2 | Die | Stock |
APN229 |
GaN HEMT Power Amplifier | 27-32 | 20 | 17 | 39 | Die | Stock |
APN248 | GaN HEMT Power Amplifier | 27-31 | 17.5 | 42 | 44 | Die | Stock |
APN292 | GaN HEMT Power Amplifier | 27-31 | 20 | 42 | 42 | Die | Stock | APN311 | GaN HEMT Power Amplifier | 27-31 | 20 | 43 | 45 | Die | Stock |
APN173 |
GaN HEMT Power Amplifier | 34-36 | 19.5 | TBD | 37.5 | Die | Stock | APN236 |
GaN HEMT Power Amplifier | 34.5-35.5 | 16 | 38 | 40 | Die | Stock |
APN167 | GaN HEMT Power Amplifier | 43-46 | 20 | 35.5 | 38.5 | Die | Stock | APN318 |
GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 15 | - | 40 | Die | Pre-Production |
APN319 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 16 | - | 37 | Die | Pre-Production |
Before handling, assembling or testing our GaAs MMICs please review our "GaAs IC Die Handling, Assembly and Testing Techniques" application note